ELECTRICAL-PROPERTIES OF SILICON DIOXIDE DEPOSITED AT LOW-TEMPERATURE BY METAL-ORGANIC MICROWAVE PLASMA CVD TECHNIQUE

被引：7
|
作者：
RAY, SK
MAITI, CK
CHAKRABARTI, NB
机构：
[1] Microelectronics Centre, Department of Electronics & ECE, IIT, Kharagpur
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 14期
关键词：
Semiconductor devices and materials;
D O I：
10.1049/el:19900701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films. © 1990, The Institution of Electrical Engineers. All rights reserved. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1082 / 1083
页数：2
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