DOSE-RATE AND EXTENDED TOTAL DOSE CHARACTERIZATION OF RADIATION HARDENED METAL GATE CMOS INTEGRATED-CIRCUITS

被引：4
|
作者：
LONDON, A
WANG, RC
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/TNS.1978.4329509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1172 / 1175
页数：4
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