GALLIUM-ARSENIDE EPITAXY IN SILICON SUBSTRATE WINDOWS

被引：0
|
作者：
OSINSKII, VI
KATSAPOV, FM
机构：
来源：
DOKLADY AKADEMII NAUK BELARUSI | 1978年 / 22卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：123 / 126
页数：4
相关论文
共 50 条
  • [1] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE
    ZALM, PC
    MAREE, PMJ
    OLTHOF, RIJ
    APPLIED PHYSICS LETTERS, 1985, 46 (06) : 597 - 599
  • [2] THE EPITAXY OF GERMANIUM ON GALLIUM-ARSENIDE
    AYERS, JE
    GHANDHI, SK
    JOURNAL OF CRYSTAL GROWTH, 1988, 89 (04) : 371 - 377
  • [3] GALLIUM-ARSENIDE ON SILICON
    FAN, JCC
    VLSI SYSTEMS DESIGN, 1987, 8 (13): : 80 - 81
  • [4] GALLIUM-ARSENIDE ON SILICON
    SHICHIJO, H
    ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609
  • [5] DETECTIVITY OF GALLIUM-ARSENIDE ON SILICON SUBSTRATE PHOTOCONDUCTIVE DETECTORS
    CONSTANT, M
    BOUSSEKEY, L
    DECOSTER, D
    BARTENLIAN, B
    PASCAL, D
    ELECTRONICS LETTERS, 1990, 26 (04) : 239 - 241
  • [6] LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE ON SILICON SUBLAYERS
    ZHURBA, AM
    KOVALENKO, VF
    KRASNOV, VA
    LISOVOI, BV
    SHUTOV, SV
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 17 (07): : 25 - 27
  • [7] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
    PALIK, ED
    HOLM, RT
    GIBSON, JW
    THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
  • [8] MOLECULAR LAYER EPITAXY IN GALLIUM-ARSENIDE
    NISHIZAWA, J
    KURABAYASHI, T
    ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 1 - 15
  • [9] DEVELOPMENT OF GALLIUM-ARSENIDE FOR INFRARED WINDOWS
    BRAU, MJ
    HAFNER, HC
    IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1976, 12 (03) : 420 - 420
  • [10] GALLIUM-ARSENIDE ON SILICON - A REVIEW
    MORKOC, H
    UNLU, H
    ZABEL, H
    OTSUKA, N
    SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76
12345