XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES

被引：46
作者：
GRANT, RW
WALDROP, JR
KRAUT, EA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.569806
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1451 / 1455
页数：5
相关论文
共 31 条
[21]  
MARINACE JC, 1960, IBM J, P280
[22]  
Milnes A. G., 1972, HETEROJUNCTIONS META
[23]   GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE [J].
PICKETT, WE ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1977, 39 (02) :109-112
[24]  
PICKETT WE, UNPUBLISHED
[25]   COMPOSITION, STRUCTURE, SURFACE-STATES, AND O-2 STICKING COEFFICIENT FOR DIFFERENTLY PREPARED GAAS(111)AS SURFACES [J].
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1977, 63 (01) :33-44
[26]   PREPARATION OF GE/SI AND GE/GAAS HETEROJUNCTIONS [J].
RIBEN, AR ;
FEUCHT, DL ;
OLDHAM, WG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :245-&
[27]   PREPARATION OF GE-GAAS HETEROJUNCTIONS BY VACUUM EVAPORATION [J].
RYU, I ;
TAKAHASHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (11) :850-+
[28]   HETEROJUNCTION BAND DISCONTINUITIES [J].
SHAY, JL ;
WAGNER, S ;
PHILLIPS, JC .
APPLIED PHYSICS LETTERS, 1976, 28 (01) :31-33
[29]  
STRATTON JA, 1941, ELECTROMAGNETIC THEO, P190
[30]   POTENTIAL PROFILING ACROSS SEMICONDUCTOR JUNCTIONS BY AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE [J].
WALDROP, JR ;
HARRIS, JS .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5214-5217
1234