SILICON RIBBON GROWTH USING ELECTRON-BOMBARDMENT

被引：5
作者：
CASENAVE, D
GAUTHIER, R
VANDEKERKOVE, L
PINARD, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期
关键词：
D O I：
10.1063/1.93217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：698 / 700
页数：3
相关论文
共 10 条
[1]  
BELOUET C, 1976, INT C TOULOUSE CNES, P191
[2]  
CASENAVE D, UNPUB SOLAR ENERGY M
[3]  
CASENAVE D, 1980, THESIS LYON
[4]  
CASENAVE D, Patent No. 8016295
[5]   NATURE OF THERMAL-STRESSES AND POTENTIAL FOR REDUCED THERMAL BUCKLING OF THIN SILICON RIBBON GROWN AT HIGH-SPEED [J].
GURTLER, RW .
JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :69-82
[6]   SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION [J].
GURTLER, RW ;
BAGHDADI, A ;
ELLIS, RJ ;
LESK, IA .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :441-477
[7]  
NODET H, 1981, REV PHYS APPL, V15, P591
[8]  
SCHWARTZ JC, 1975, J ELECTRON MATER, V4, P255
[9]   DENDRITIC WEB SILICON FOR SOLAR-CELL APPLICATION [J].
SEIDENSTICKER, RG .
JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) :17-22
[10]  
VANDEKERKOVE L, UNPUB SOLAR CELLS
1