DIFFUSION OF GOLD IN SEMI-INFINITE SINGLE-CRYSTALS OF SILICON

被引:24
作者
HUNTLEY, FA [1 ]
WILLOUGHBY, AF [1 ]
机构
[1] UNIV SOUTHAMPTON, ENGN MAT LABS, SOUTHAMPTON, ENGLAND
关键词
D O I
10.1080/14786437308228002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1319 / 1340
页数:22
相关论文
共 22 条
[11]   EFFECT OF DISLOCATION DENSITY ON DIFFUSION OF GOLD IN THIN SILICON SLICES [J].
HUNTLEY, FA ;
WILLOUGHBY, AF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :414-422
[12]   DIFFUSION OF GOLD IN THIN SILICON SLICES [J].
HUNTLEY, FA ;
WILLOUGHBY, AF .
SOLID-STATE ELECTRONICS, 1970, 13 (09) :1231-+
[13]  
MEHRER H, UNPUBLISHED WORK
[14]  
MILEVSKII LS, 1963, SOV PHYS-SOL STATE, V4, P1792
[15]   SELF DIFFUSION IN INTRINSIC SILICON [J].
PEART, RF .
PHYSICA STATUS SOLIDI, 1966, 15 (02) :K119-&
[16]   In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J].
Stutzmarm, Martin .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09) :3024-3026
[17]  
Seeger A., 1971, Radiation Effects, V9, P15, DOI 10.1080/00337577108242025
[18]   SOLUBILITY AND DIFFUSIVITY OF GOLD, IRON, AND COPPER IN SILICON [J].
STRUTHERS, JD .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) :1560-1560
[19]   A NOTE ON THE THEORY OF DIFFUSION OF COPPER IN GERMANIUM [J].
STURGE, MD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470) :297-306
[20]   ON THE BEHAVIOR OF RAPIDLY DIFFUSING ACCEPTORS IN GERMANIUM [J].
VANDERMAESEN, F ;
BRENKMAN, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (05) :229-234