HIGH-RATE SELECTIVE ETCHING OF A-SIH USING HYDROGEN RADICALS

被引：19

作者：

NAGAYOSHI, H ^{[1
]}

YAMAGUCHI, M ^{[1
]}

KAMISAKO, K ^{[1
]}

HORIGOME, T ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 169,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5A期

关键词：

HYDROGEN RADICAL; ETCH RATE; SELECTIVE ETCHING; AMORPHOUS SILICON; MICROWAVE; SILICON NITRIDE; SILICON OXIDE;

D O I：

10.1143/JJAP.33.L621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-rate selective etching method of hydrogenated amorphous silicon (a-Si:H) using hydrogen radicals is presented. A very high etch rate of 2.7 mum/min was obtained at 50-degrees-C using a microwave hydrogen afterglow method. However, amorphous silicon nitride (a-SiN].2:H), silicon oxide (SiO2), silicon carbide (a-SiCo.5:H), and Al films were not etched under the same conditions. These results suggest that high-rate selective etching of a-Si:H can be achieved using hydrogen radicals. This method is suitable for the fabrication of large-area devices.

引用

页码：L621 / L623

页数：3

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