CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10
作者：
BURNHAM, RD
SCIFRES, DR
STREIFER, W
机构：
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 12期
关键词：
D O I：
10.1049/el:19820345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：507 / 509
页数：3
相关论文
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[4]  
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[5]   PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
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[6]   EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
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APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219
[7]   EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
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