CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

|

作者：

BURNHAM, RD

SCIFRES, DR

STREIFER, W

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：507 / 509

页数：3

相关论文

共 50 条

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230
[2] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1674 - 1674
[3] CW ROOM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300-A) DIODE-LASERS AT 100 MW
BURNHAM, RD
LINDSTROM, C
PAOLI, TL
SCIFRES, DR
STREIFER, W
HOLONYAK, N
APPLIED PHYSICS LETTERS, 1983, 42 (11) : 937 - 939
[4] VISIBLE CW SINGLE QUANTUM WELL (ALGA)AS DIODE-LASERS
LINDSTROM, C
BURNHAM, RD
SCIFRES, DR
APPLIED PHYSICS LETTERS, 1983, 42 (02) : 134 - 136
[5] HIGH AL-CONTENT VISIBLE (ALGA)AS MULTIPLE QUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KAWAI, H
MATSUDA, O
KANEKO, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L727 - L729
[6] UNIFORMITY OF QUANTUM WELL HETEROSTRUCTURE GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SCIFRES, DR
BURNHAM, RD
BERNSTEIN, M
CHUNG, H
ENDICOTT, F
MOSBY, W
TRAMONTANA, J
WALKER, J
YINGLING, RD
APPLIED PHYSICS LETTERS, 1982, 41 (06) : 501 - 504
[7] GAAS/GA0.73AL0.27AS SINGLE QUANTUM-WELL STRUCTURE ANALYZED BY REFLECTANCE AND PHOTOLUMINESCENCE
HAMEURY, A
CHASSAING, G
SIGRIST, M
DEPARIS, C
MASSIES, J
SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (04) : 433 - 437
[8] PIEZOSPECTROSCOPY OF A GAAS/GA0.73AL0.27AS SINGLE QUANTUM-WELL STRUCTURE - PIEZOELECTRIC EFFECTS
QIANG, H
POLLAK, FH
SACKS, RN
SOLID STATE COMMUNICATIONS, 1992, 84 (1-2) : 51 - 55
[9] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
HIRTZ, P
LARIVAIN, JP
BONDEAU, R
DECREMOUX, B
DUCHEMIN, JP
ELECTRONICS LETTERS, 1981, 17 (17) : 597 - 598
[10] HIGH-POWER GAAS/ALGAAS DIODE-LASERS GROWN ON A SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
CONNOLLY, J
DINKEL, N
MENNA, R
GILBERT, D
HARVEY, M
APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2552 - 2554

← 1 2 3 4 5 →