CALCULATION OF POWER DIODE REVERSE-RECOVERY TIME FOR SPICE SIMULATIONS

被引：3
作者：
STROLLO, AGM
机构：
[1] Department of Electronic Engineering, University of Naples, 80125-Naples, via Claudio
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 14期
关键词：
POWER ELECTRONICS; DIODES; SEMICONDUCTOR DEVICE MODELING; SPICE;
D O I：
10.1049/el:19940770
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new model for the calculation of power diode reverse-recovery time is described. The model takes into account the effect of emitter recombination and is easily incorporated into the PSPICE simulator. Comparisons between the proposed model and numerical simulation results are presented.
引用
收藏
页码：1109 / 1110
页数：2
相关论文
共 10 条
[1]  
Antognetti P, 1988, SEMICONDUCTOR DEVICE
[2]   NON-QUASI-STATIC SMALL-SIGNAL MODELS FOR SEMICONDUCTOR JUNCTION DIODES WITH EXTENSIONS FOR TRANSISTORS [J].
CHEN, MK ;
LINDHOLM, FA ;
JUNG, TW .
SOLID-STATE ELECTRONICS, 1987, 30 (08) :883-885
[3]   INTEGRATED REVERSE-RECOVERY MODEL OF THE POWER BIPOLAR DIODE FOR SPICE3 [J].
CONWAY, NJ ;
LACY, JG .
ELECTRONICS LETTERS, 1993, 29 (15) :1392-1394
[4]  
KRAUS R, 1992, IEEE POWER ELECTRON, P863, DOI 10.1109/PESC.1992.254792
[5]   A Simple Diode Model with Reverse Recovery [J].
Lauritzen, Peter O. ;
Ma, Cliff L. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (02) :188-191
[6]   Diode Forward and Reverse Recovery Model for Power Electronic SPICE Simulations [J].
Liang, Young-Chii ;
Gosbell, Victor J. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1990, 5 (03) :346-356
[7]   P-I-N-DIODE RECOVERY STORAGE TIME [J].
SLATTER, JAG ;
WHELAN, JP .
SOLID-STATE ELECTRONICS, 1980, 23 (12) :1235-1242
[8]  
Tatakis E., 1992, EPE Journal, V2, P259
[9]  
VOGLER T, 1992, IEEE POWER ELECTRON, P870, DOI 10.1109/PESC.1992.254791
[10]  
1993, DESIGN CTR REFERENCE
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