INFLUENCE OF PHASE-BREAKING PROCESSES ON SHOT NOISE IN RESONANT TUNNELING DEVICES

被引：1

作者：

ALAM, MA

KHONDKER, AN

机构：

[1] CLARKSON UNIV,DEPT ELECT & COMP ENGN,POTSDAM,NY 13699

[2] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, Han et al. have shown that shot noise power associated with the current in double-barrier resonant tunneling structures is significantly reduced due to reductions in velocity fluctuations. Their model is based on the transit time of coherent electrons across the device structure. In this brief, we show that in the presence of phase-breaking processes, the shot noise cutoff frequency is higher than that predicted by Han et al. This is because an increased phase-breaking collision rate tends to broaden the effective velocity distribution for the transmitted electrons.

引用

页码：2184 / 2186

页数：3

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