REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR

被引：31

作者：

MORITA, S ^{[1
]}

FUKANO, Y ^{[1
]}

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

SUGAWARA, Y ^{[1
]}

YAMANISHI, Y ^{[1
]}

OASA, T ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 11B期

关键词：

CONTACT ELECTRIFICATION; THIN INSULATOR; SILICON OXIDE; REPRODUCIBILITY; CONTROLLABILITY; MICROSCOPIC METHOD; CHARGE DISSIPATION;

D O I：

10.1143/JJAP.32.L1701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of contact electrification on an insulator is one of the oldest problems in physics. The major problem is the lack of reliable data on the contact electrification and its dissipation, because of poor experimental reproducibility on even the sign of the contact electrified charge. Here we report a novel microscopic method with a bias voltage to obtain reproducible and controllable contact electrification on a thin insulator, and the first experimental result on the dissipation of the contact electrified charge.

引用

页码：L1701 / L1703

页数：3

共 5 条

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