BAND-EDGE STATES AND VALENCE-BAND OFFSET OF GAP/INP STRAINED-LAYER SUPERLATTICES

被引：11
|
作者：
ARMELLES, G [1 ]
MUNOZ, MC [1 ]
ALONSO, MI [1 ]
机构：
[1] CSIC,INST CIENCIA MAT,E-28006 MADRID,SPAIN
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.47.16299
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study of the optical properties of short-period GaP/InP(001) strained-layer superlattices is presented. photoluminescence, photoreflectance, and resonant Raman spectroscopies have been used to determine both the interband transition energies and the spatial distribution of the electronic wave functions. Comparison of the experimental results to those of an empirical tight-binding calculation provides an overall picture of the superlattices's electronic structure, and gives an estimate of the valence-band offset of about 0.6 eV.
引用
收藏
页码：16299 / 16304
页数：6
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