IMPLANTATION OF RARE-EARTH ATOMS INTO SI AND III-V COMPOUNDS

被引:4
作者
KOZANECKI, A [1 ]
LANGER, JM [1 ]
PEAKER, AR [1 ]
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER M60 1QD,LANCS,ENGLAND
关键词
D O I
10.12693/APhysPolA.83.59
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Most recent results on doping of Si and III-V semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10(18) cm-3 clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
引用
收藏
页码:59 / 70
页数:12
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