IMPLANTATION OF RARE-EARTH ATOMS INTO SI AND III-V COMPOUNDS

被引：4

作者：

KOZANECKI, A ^{[1
]}

LANGER, JM ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

ACTA PHYSICA POLONICA A | 1993年 / 83卷 / 01期

关键词：

D O I：

10.12693/APhysPolA.83.59

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Most recent results on doping of Si and III-V semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10(18) cm-3 clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

引用

页码：59 / 70

页数：12

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