GROWTH OF ABRUPT GE LAYERS IN SI (100)

被引：21
|
作者：
IYER, SS
PUKITE, PR
TSANG, JC
COPEL, MW
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90437-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：439 / 443
页数：5
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