DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2

被引:338
作者
HARARI, E
机构
关键词
D O I
10.1063/1.325096
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2478 / 2489
页数:12
相关论文
共 32 条
[1]   ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2 [J].
ARNOLD, GW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :220-223
[2]  
BARRETT CR, 1976, TECH DIG 1976 IEEE I, P319
[3]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+
[4]   IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].
DISTEFANO, TH ;
SHATZKES, M .
APPLIED PHYSICS LETTERS, 1974, 25 (12) :685-687
[5]   IMPACT IONIZATION IN SILICON DIOXIDE [J].
FERRY, DK .
SOLID STATE COMMUNICATIONS, 1976, 18 (08) :1051-1053
[6]   LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J].
HARARI, E ;
WANG, S ;
ROYCE, BSH .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1310-1317
[7]   CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].
HARARI, E .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603
[8]   HOLE TRANSPORT IN MOS OXIDES [J].
HUGHES, RC ;
EERNISSE, EP ;
STEIN, HJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2227-2233
[9]  
JENQ CS, COMMUNICATION
[10]  
JOHNSON WC, 1976, RADCTR76158 PRINC U, P17