PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI/SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS

被引：21

作者：

TANG, YS

TORRES, CMS

KUBIAK, RA

WHALL, TE

PARKER, EHC

PRESTING, H

KIBBEL, H

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[2] DAIMLER BENZ AG,RES CTR,D-89081 ULM,GERMANY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 02期

关键词：

PHOTOLUMINESCENCE; PHOTOREFLECTANCE; QUANTUM DOTS; SI/SIGE;

D O I：

10.1007/BF02659629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanometer-scale quantum dots based on a series of Si/Si0.91Ge0.09 strained layer superlattices and a Si-9/Ge-6 strain-symmetrized superlattice were fabricated using electron beam lithography and reactive ion etching. They were investigated by photoluminescence and photoreflectance. It was found for the first time that the quantum efficiency of optical emission from the quantum well layers increased by over two orders of magnitude when the quantum dot sizes were reduced to less than or equal to 100 nm.

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页码：99 / 106

页数：8

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