DISLOCATIONS IN WEBS OF GERMANIUM + SILICON

被引：21

作者：

OHARA, S

机构：

来源：

关键词：

D O I：

10.1063/1.1713326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：409 / &

共 12 条

[1] EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON [J].

DASH, WC .

[2] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

[3]

DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V65, P194

[4]

FAUST JW, 1962, METALLURG SOC C, V15, P181

[5]

HORNSTRA J, 1958, PHYS CHEM SOLIDS, V5, P129

LANG, AR .

[7]

LOMER WA, 1951, PHILOS MAG, V41, P1327

[8] DIFFUSION OF VACANCIES DURING QUENCHING OF GE AND SI [J].

MELNGAILIS, J ;

OHARA, S .

[9]

OHARA S, TO BE PUBLISHED

[10] OBSERVATIONS ON THE DISLOCATION STRUCTURE OF GERMANIUM CRYSTALS [J].

PFANN, WG ;

VOGEL, FL .

ACTA METALLURGICA, 1957, 5 (07) :377-384