CHARACTERIZATION OF BCL3-CL2 SILICON TRENCH ETCHING

被引：7

作者：

KASSAM, A

MEADOWCROFT, C

SALAMA, CAT

RATNAM, P

机构：

[1] Department of Electrical Engineering, University of Toronto, Toronto

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 05期

关键词：

D O I：

10.1149/1.2086738

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A reactive ion etching (RIE) process used to generate trenches in silicon, using BC13-C12 gas chemistry, is presented. Experimental results showing the dependence of trench characteristics on etch process parameters are discussed and an optimum recipe derived. Radiation damage caused by RIE and methods of reducing such damage to improve electrical characteristics of trenched capacitor structures are considered. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1613 / 1617

页数：5

共 7 条

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[6] Rung R. D., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P574
[7] ETCHED SHAPE CONTROL OF SINGLE-CRYSTAL SILICON IN REACTIVE ION ETCHING USING CHLORINE
SATO, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) : 2856 - 2862

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