NONCONFORMAL AL VIA FILLING AND PLANARIZATION BY PARTIALLY IONIZED BEAM DEPOSITION FOR MULTILEVEL INTERCONNECTION

被引：18

作者：

MEI, SN

LU, TM

ROBERT, S

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12181

[2] IBM CORP,ESSEX JUNCTION,VT 05452

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：503 / 505

页数：3

共 9 条

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :55-57

[2]

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[3] THE CHARACTERIZATION OF VIA-FILLING TECHNOLOGY WITH ELECTROLESS PLATING METHOD [J].

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[5] HIGH-ASPECT-RATIO VIA-HOLE FILLING WITH ALUMINUM MELTING BY EXCIMER LASER IRRADIATION FOR MULTILEVEL INTERCONNECTION [J].

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :76-78

[6] UNIDIRECTIONAL DEPOSITION OF ALUMINUM USING NOZZLE JET BEAM TECHNIQUE [J].

RAMAYARANANAN, R ;

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[7]

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[8] SIGNIFICANT IMPROVEMENT IN STEP COVERAGE USING BIAS SPUTTERED ALUMINUM [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :457-460

[9] PLANARIZATION OF GOLD AND ALUMINUM THIN-FILMS USING A PULSED LASER [J].

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WEISBERG, AH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :1-4

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