THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS

被引：9
作者：
MILVIDSKAYA, AG
POLYAKOV, AY
KOLCHINA, GP
MILNES, AG
GOVORKOV, AV
SMIRNOV, NB
TUNITSKAYA, IV
机构：
[1] Institute of Rare Metals, Moscow, 109017
[2] ECE Department, Carnegie Mellon University, Pittsburgh
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 22卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0921-5107(94)90257-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is shown that high resistivity p-type GaSb closely compensated by tellurium to about 10(3) Omega cm at 77 K can be obtained by Czochralski growth. The electrical, optical and luminescent properties of these crystals are dominated by the doubly charged Ga-Sb-related native acceptors.
引用
收藏
页码：279 / 282
页数：4
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