STRUCTURAL AND ELECTRICAL-PROPERTIES OF AL2O3 THIN-FILMS ON P-SI GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

KIM, TW

YOM, SS

KANG, WN

YOON, YS

KIM, C

KIM, S

YANG, IS

WEE, YJ

机构：

[1] KOREA INST SCI & TECHNOL,APPL PHYS LAB,SEOUL 130650,SOUTH KOREA

[2] GOLDSTAR CENT RES LAB,SEOUL 137140,SOUTH KOREA

[3] EWHA WOMANS UNIV,DEPT PHYS,SEOUL 120750,SOUTH KOREA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90768-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 10(11) eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.

引用

页码：854 / 857

页数：4

共 9 条

[1] HIGH-TC Y-BA-CU-O THIN-FILMS PREPARED BY INSITU LOW-TEMPERATURE CODEPOSITION OF Y, BAF2, AND CU ON ALPHA-AL2O3 SUBSTRATES [J].