OBSERVATION OF SURFACE BOUND STATE AND 2-DIMENSIONAL ENERGY BAND BY ELECTRON TUNNELING

被引:140
作者
TSUI, DC
机构
关键词
D O I
10.1103/PhysRevLett.24.303
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:303 / &
相关论文
共 16 条
[1]  
APPELBAUM JA, TO BE PUBLISHED
[2]   CONDUCTANCE ANOMALIES DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J].
BENDANIEL, DJ ;
DUKE, CB .
PHYSICAL REVIEW, 1967, 160 (03) :679-+
[3]  
Burstein E., 1964, PHONONS PHONON INTER, P276
[4]   PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS [J].
CHYNOWETH, AG ;
THOMAS, DE ;
LOGAN, RA .
PHYSICAL REVIEW, 1962, 125 (03) :877-&
[5]   ANALYSIS OF TUNNELING MEASUREMENT OF ELECTRONIC SELF-ENERGIES DUE TO INTERACTIONS OF ELECTRONS AND HOLES WITH OPTICAL PHONONS IN SEMICONDUCTORS [J].
DAVIS, LC ;
DUKE, CB .
PHYSICAL REVIEW, 1969, 184 (03) :764-+
[6]   OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J].
DUKE, CB .
PHYSICAL REVIEW, 1967, 159 (03) :632-+
[7]   NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].
ESAKI, L ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (24) :1108-&
[8]   MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].
FOWLER, AB ;
FANG, FF ;
HOWARD, WE ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&
[9]   TUNNELING FROM METAL TO SEMICONDUCTORS [J].
GRAY, PV .
PHYSICAL REVIEW, 1965, 140 (1A) :A179-+
[10]   TRANSPORT PROPERTIES OF LIGHT AND HEAVY HOLES IN THE SPACE CHARGE REGION OF A CLEAN AND WATER COVERED (III) GERMANIUM SURFACE [J].
HANDLER, P ;
EISENHOUR, S .
SURFACE SCIENCE, 1964, 2 :64-74