BAND-GAP NARROWING IN HIGHLY DOPED N-TYPE AND P-TYPE GAAS STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY

被引：167

作者：

BORGHS, G

BHATTACHARYYA, K

DENEFFE, K

VANMIEGHEM, P

MERTENS, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4381 / 4386

页数：6

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