共 50 条
- [32] HIGH-EFFICIENCY STRIPE-GEOMETRY INGAASP DH LASERS (LAMBDA = 1.3 MU-M) WITH CHEMICALLY-ETCHED MIRRORS ELECTRON DEVICE LETTERS, 1980, 1 (11): : 242 - 243
- [36] INVESTIGATION OF THE SATURATION OF THE INTENSITY OF THE LAMBDA=1.3MU- LUMINESCENCE EMITTED FROM INGAASP/INP STRUCTURES AT HIGH-RATES OF EXCITATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 287 - 289
- [37] HIGH-SPEED LAMBDA=1.3 MU-M METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 938 - 940
- [40] DEFECTS OF RAPID DEGRADATION ON FACET MIRRORS OF INGAASP-INP LASERS IN THE REGION OF 1.3 MU-M KVANTOVAYA ELEKTRONIKA, 1987, 14 (01): : 204 - 205