PRESSURE-INDUCED TRANSITIONS IN AMORPHOUS TLXSE100-X ALLOYS

被引：2

作者：

PARTHASARATHY, G ^{[1
]}

ASOKAN, S ^{[1
]}

NAIK, GM ^{[1
]}

KRISHNA, RR ^{[1
]}

机构：

[1] UNIV GESAMTHSCH PADERBORN,FACHBEREICH PHYS,D-4790 PADERBORN,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 56卷 / 05期

关键词：

D O I：

10.1080/09500838708214707

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：191 / 195

页数：5

共 16 条

[1] HIGH-PRESSURE CLAMP FOR ELECTRICAL MEASUREMENTS UP TO 8 GPA AND TEMPERATURE DOWN TO 77 K [J].

BANDYOPADHYAY, AK ;

NALINI, AV ;

GOPAL, ESR ;

SUBRAMANYAM, SV .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (01) :136-139

[2] OPTICAL-ABSORPTION EDGE IN LIQUID SEMICONDUCTOR ALLOYS SE1-XTLX [J].

BELL, FG ;

CUTLER, M .

PHYSICAL REVIEW B, 1986, 34 (08) :5270-5279

[3] STRUCTURE OF THE AMORPHOUS T1SEX SYSTEM [J].

CERVINKA, L ;

HRUBY, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (03) :275-295

[4]

Connell G., 1972, J NON-CRYST SOLIDS, V8, P215

[5]

FERRIER RP, 1972, J NONCRYST SOLIDS, V8, P798

[6] PRESSURE-DEPENDENCE OF REFRACTIVE-INDEX OF AMORPHOUS LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M .

PHYSICAL REVIEW B, 1972, 6 (06) :2273-&

[7] COMPOSITIONAL TRENDS IN OPTICAL PROPERTIES OF AMORPHOUS LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M .

PHYSICAL REVIEW B, 1973, 7 (12) :5237-5252

[8]

MINOMURA S, 1982, AMORPHOUS SEMICONDUC, P245

[9]

MOTT NF, 1987, CONDUCTION NONCRYSTA, P71

[10] COMPOSITIONAL DEPENDENCE OF ELECTRONIC PROPERTIES OF AMORPHOUS TE-TL [J].

PAESLER, MA .

PHYSICAL REVIEW B, 1976, 13 (12) :5578-5590

← 1 2 →