GRAZING-ANGLE RBS AND CHANNELING ANALYSIS OF BF2+ IMPLANTATION DAMAGE IN SILICON

The anomalous damage behavior of BF2+ implantation into silicon at 300 and 77 K is investigated by using grazing-angle Rutherford backscattering and channelling combined with transmission electron microscopy. The damage or the amorphous layer produced by BF2+ implantation is different from that produced by other heavier (than Al-27+) ions. For BF2+ implantation at 300 K, there are two damage peaks, one at a depth near the projectile range of the ions, the other near the surface. For BF2+ implantation at 77 K, the damage or the amorphous layer first occurs at the surface, then the amorphous layer extends into the bulk of silicon with increasing dose.