ELECTRON EMISSION FROM SILICON P-N JUNCTIONS

被引：27
作者：
SENITZKY, P
机构：
来源：
PHYSICAL REVIEW | 1959年 / 116卷 / 04期
关键词：
D O I：
10.1103/PhysRev.116.874
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：874 / 879
页数：6
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