OSCILLATION PHENOMENON IN THICK-FILM CO SENSOR

被引：23

作者：

NITTA, M

HARADOME, M

机构：

[1] Physical Science Laboratories, Nihon University at Narashino, Funabashi 274

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 03期

关键词：

D O I：

10.1109/T-ED.1979.19408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An oscillation phenomenon in ThO2-doped SnO2 prepared by thick-film technology has been studied. The oscillation consists of two components at high sample temperature (210-230°C). When the sample temperature is kept at 210°C, a single-component oscillation with a sawtooth waveform starts to appear as CO-gas concentration increases. The activation energies of the surface reaction are 28.9 kcal/mol and 11.9 kcal/mol at the sample temperatures of 180-200°C and 210-230°C, respectively. From these experiments, it has been found that the coverage of oxygen on the surface plays an important role in establishing the oscillatory states. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：219 / 223

页数：5

共 14 条

[1] Adsorption of nitrogen and the mechanism of ammonia decomposition over iron catalysts [J].