THEORETICAL THRESHOLD VOLTAGES FOR MOS FIELD EFFECT TRANSISTORS

被引：23

作者：

RICHMAN, P

机构：

[1] The Bayside Laboratory, Research Center of General Telephone, Electronics Laboratories Incorporated, Bayside, NY

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 09期

关键词：

D O I：

10.1016/0038-1101(68)90105-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By employing the charge neutrality condition in the vicinity of the gate insulator in the MOS structure, theoretical curves of the threshold voltages for both n- and p-channel MOSFETs are obtained as a function of substrate doping concentration, built-in positive charge at the oxide-silicon interface, oxide thickness, and surface trapping. Curves of theoretical threshold voltages for MOSFETs employing Al2O3-SiO2 gate insulators are also obtained. The effect of gold doping of the silicon substrate upon the threshold voltages of MOSFETs is discussed. As a result, the conditions which determine whether a particular MOSFET will be a depletion type or an enhancement type are specified as a function of the construction parameters of the device. © 1968.

引用

页码：869 / &

共 12 条

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