IIA-3 113-GHZ F(T) GRADED-BASE SIGE HBTS

被引：27

作者：

CRABBE, E ^{[1
]}

MEYERSON, B ^{[1
]}

HARAME, D ^{[1
]}

STORK, J ^{[1
]}

MEGDANIS, A ^{[1
]}

COTTE, J ^{[1
]}

CHU, J ^{[1
]}

GILBERT, M ^{[1
]}

STANIS, C ^{[1
]}

COMFORT, J ^{[1
]}

PATTON, G ^{[1
]}

SUBBANNA, S ^{[1
]}

机构：

[1] IBM CORP,DIV RES,T J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：2100 / 2101

页数：2

共 6 条

[1]

Crabbe E. F., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P17, DOI 10.1109/IEDM.1990.237236

[2] 73-GHZ SELF-ALIGNED SIGE-BASE BIPOLAR-TRANSISTORS WITH PHOSPHORUS-DOPED POLYSILICON EMITTERS [J].

CRABBE, EF ;

COMFORT, JH ;

LEE, W ;

CRESSLER, JD ;

MEYERSON, BS ;

MEGDANIS, AC ;

SUN, JYC ;

STORK, JMC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) :259-261

[3] 91 GHZ SIGE HBTS GROWN BY MBE [J].

GRUHLE, A ;

KIBBEL, H ;

ERBEN, U ;

KASPER, E .

ELECTRONICS LETTERS, 1993, 29 (04) :415-417

[4] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799

[5] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

PATTON, GL ;

COMFORT, JH ;

MEYERSON, BS ;

CRABBE, EF ;

SCILLA, GJ ;

DEFRESART, E ;

STORK, JMC ;

SUN, JYC ;

HARAME, DL ;

BURGHARTZ, JN .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) :171-173

[6]

VANWIJNEN PJ, 1987, BCTM, P70

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