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DISTORTION IN GAAS-MESFET SWITCH CIRCUITS
被引:0
作者
:
CAVERLY, RH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,MICROWAVE SOLID STATE GRP,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
UNIV LEEDS,MICROWAVE SOLID STATE GRP,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
CAVERLY, RH
[
1
]
机构
:
[1]
UNIV LEEDS,MICROWAVE SOLID STATE GRP,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
来源
:
MICROWAVE JOURNAL
|
1994年
/ 37卷
/ 09期
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:106 / &
相关论文
共 7 条
[1]
AYALSI Y, 1982, MICROWAVE J, V25, P61
[2]
DISTORTION IN BROAD-BAND GALLIUM-ARSENIDE MESFET CONTROL AND SWITCH CIRCUITS
[J].
CAVERLY, RH
论文数:
0
引用数:
0
h-index:
0
CAVERLY, RH
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1991,
39
(04)
:713
-717
[3]
DISTORTION IN OFF-STATE ARSENIDE MESFET SWITCHES
[J].
CAVERLY, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, University of Massachusetts, Dartmouth
CAVERLY, RH
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1993,
41
(08)
:1323
-1328
[4]
GAAS-FET RF SWITCHES
[J].
GOPINATH, A
论文数:
0
引用数:
0
h-index:
0
GOPINATH, A
;
RANKIN, JB
论文数:
0
引用数:
0
h-index:
0
RANKIN, JB
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(07)
:1272
-1278
[5]
CHARACTERIZATION OF LINEAR AND NONLINEAR PROPERTIES OF GAAS-MESFETS FOR BROAD-BAND CONTROL APPLICATIONS
[J].
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
GUTMANN, RJ
;
FRYKLUND, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
FRYKLUND, DJ
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1987,
35
(05)
:516
-521
[6]
MODELING AND DESIGN OF GAAS-MESFET CONTROL DEVICES FOR BROAD-BAND APPLICATIONS
[J].
JAIN, N
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
JAIN, N
;
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
GUTMANN, RJ
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1990,
38
(02)
:109
-117
[7]
A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION
[J].
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
TAKADA, T
;
YOKOYAMA, K
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, K
;
IDA, M
论文数:
0
引用数:
0
h-index:
0
IDA, M
;
SUDO, T
论文数:
0
引用数:
0
h-index:
0
SUDO, T
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1982,
30
(05)
:719
-724
←
1
→
共 7 条
[1]
AYALSI Y, 1982, MICROWAVE J, V25, P61
[2]
DISTORTION IN BROAD-BAND GALLIUM-ARSENIDE MESFET CONTROL AND SWITCH CIRCUITS
[J].
CAVERLY, RH
论文数:
0
引用数:
0
h-index:
0
CAVERLY, RH
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1991,
39
(04)
:713
-717
[3]
DISTORTION IN OFF-STATE ARSENIDE MESFET SWITCHES
[J].
CAVERLY, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, University of Massachusetts, Dartmouth
CAVERLY, RH
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1993,
41
(08)
:1323
-1328
[4]
GAAS-FET RF SWITCHES
[J].
GOPINATH, A
论文数:
0
引用数:
0
h-index:
0
GOPINATH, A
;
RANKIN, JB
论文数:
0
引用数:
0
h-index:
0
RANKIN, JB
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(07)
:1272
-1278
[5]
CHARACTERIZATION OF LINEAR AND NONLINEAR PROPERTIES OF GAAS-MESFETS FOR BROAD-BAND CONTROL APPLICATIONS
[J].
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
GUTMANN, RJ
;
FRYKLUND, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851
FRYKLUND, DJ
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1987,
35
(05)
:516
-521
[6]
MODELING AND DESIGN OF GAAS-MESFET CONTROL DEVICES FOR BROAD-BAND APPLICATIONS
[J].
JAIN, N
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
JAIN, N
;
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
GUTMANN, RJ
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1990,
38
(02)
:109
-117
[7]
A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION
[J].
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
TAKADA, T
;
YOKOYAMA, K
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, K
;
IDA, M
论文数:
0
引用数:
0
h-index:
0
IDA, M
;
SUDO, T
论文数:
0
引用数:
0
h-index:
0
SUDO, T
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1982,
30
(05)
:719
-724
←
1
→