HETEROJUNCTION TUNNELING MODEL FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：0
作者：
POST, IRC [1 ]
ASHBURN, P [1 ]
NOUAILHAT, A [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 25期
关键词：
MODELING; SEMICONDUCTOR DEVICES AND MATERIALS; TRANSISTORS;
D O I：
10.1049/el:19921464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new tunnelling model is described which treats the interfacial layer in a polysilicon emitter transistor as a wide bandgap semiconductor. Potential barriers are formed in the valence and conduction bands, the sizes of which vary with the dopant type and concentration in the interfacial layer.
引用
收藏
页码：2276 / 2277
页数：2
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