HETEROJUNCTION TUNNELING MODEL FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：0
|
作者：
POST, IRC [1 ]
ASHBURN, P [1 ]
NOUAILHAT, A [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 25期
关键词：
MODELING; SEMICONDUCTOR DEVICES AND MATERIALS; TRANSISTORS;
D O I：
10.1049/el:19921464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new tunnelling model is described which treats the interfacial layer in a polysilicon emitter transistor as a wide bandgap semiconductor. Potential barriers are formed in the valence and conduction bands, the sizes of which vary with the dopant type and concentration in the interfacial layer.
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页码：2276 / 2277
页数：2
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