HETEROJUNCTION TUNNELING MODEL FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：0

作者：

POST, IRC ^{[1
]}

ASHBURN, P ^{[1
]}

NOUAILHAT, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

MODELING; SEMICONDUCTOR DEVICES AND MATERIALS; TRANSISTORS;

D O I：

10.1049/el:19921464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new tunnelling model is described which treats the interfacial layer in a polysilicon emitter transistor as a wide bandgap semiconductor. Potential barriers are formed in the valence and conduction bands, the sizes of which vary with the dopant type and concentration in the interfacial layer.

引用

页码：2276 / 2277

页数：2

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