INTERFACE AND OXIDE CHARGE EFFECTS ON DMOS CHANNEL MOBILITY

被引：11
作者：
SCHRIMPF, RD
GALLOWAY, KF
WAHLE, PJ
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 17期
关键词：
D O I：
10.1049/el:19890776
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1156 / 1158
页数：3
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