ENHANCED ELECTRICAL ACTIVATION OF ZN AND BE IMPLANTS IN GAAS BY THE CO-IMPLANTATION OF PHOSPHORUS

被引：3

作者：

TANG, ACT

SEALY, BJ

REZAZADEH, AA

机构：

[1] UNIV SURREY,DEPT ELECT & ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

VACUUM | 1989年 / 39卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(89)91093-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1061 / 1064

页数：4

共 12 条

[1]

AMBRIDGE T, 1973, RADIAT EFF, V17, P31

[2] ANNEALING OF SELENIUM-IMPLANTED GAAS [J].

BARRETT, NJ ;

GRANGE, JD ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3503-3507

[3] ANNEALING OF ZINC-IMPLANTED GAAS [J].

BARRETT, NJ ;

GRANGE, JD ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5470-5476

[4]

BARRETT NJ, 1984, IOP C P, V74, P77

[5]

DAVIES DE, 1983, IEEE ELECTR DEVICE L, V4, P356, DOI 10.1109/EDL.1983.25761

[6] TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS [J].

GWILLIAM, R ;

BENSALEM, R ;

SEALY, B ;

STEPHENS, K .

PHYSICA B & C, 1985, 129 (1-3) :440-444

[7] FORMATION OF P+-LAYER IN GAAS BY DUAL IMPLANTATION OF ZN AND AS [J].

KASAHARA, J ;

TAIRA, K ;

KATO, Y ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06) :L373-L375

[8] DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING [J].

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

COMAS, J ;

PLEW, L .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1003-1008

[9] COLLECTOR-TOP GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED DIGITAL ICS [J].

MORIZUKA, K ;

NOZU, T ;

TSUDA, K ;

AZUMA, M .

ELECTRONICS LETTERS, 1986, 22 (06) :315-316

[10] RAPID THERMAL ANNEALING OF MG+ + AS+ DUAL IMPLANTS IN GAAS [J].

PATEL, KK ;

SEALY, BJ .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1467-1469

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