SURFACE CHARACTERIZATION OF HIGH-DOSE SB+ IMPLANTED RAPID THERMAL ANNEALED MONOCRYSTALLINE SILICON

被引：0
作者：
KUMAR, SN
CHAUSSEMY, G
CHARBONNIER, M
CANUT, B
LAUGIER, A
ROMAND, M
机构：
[1] UNIV LYON 1, CNRS, UA 417, DEPT CHIM APPL, F-69622 VILLEURBANNE, FRANCE
[2] UNIV LYON 1, DEPT PHYS MAT, F-69622 VILLEURBANNE, FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期
关键词：
D O I：
10.1016/0921-5107(89)90238-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：179 / 184
页数：6
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