OBSERVATION OF THE LOCALIZED SI DANGLING-BOND PB DEFECT AT THE SI/SI3N4 INTERFACE

被引：18
作者：
STESMANS, A
VANGORP, G
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.39.2864
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：2864 / 2867
页数：4
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