ANOMALOUS OSCILLATION IN DEPLETION-MODE MOSFETS AT LOW-TEMPERATURE

被引：0
|
作者：
CARRUTHERS, C
MAVOR, J
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 05期
关键词：
D O I：
10.1049/el:19870126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
7
引用
收藏
页码：178 / 179
页数：2
相关论文
共 50 条
  • [11] Characteristics of depletion-mode In0.53Ga0.47As MOSFETs
    Kang, SJ
    Han, JC
    Kim, JH
    Jo, SJ
    Park, SW
    Song, JI
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 131 - 137
  • [12] Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
    Wang, YC
    Hong, M
    Kuo, JM
    Mannaerts, JP
    Kwo, J
    Tsai, HS
    Krajewski, JJ
    Chen, YK
    Cho, AY
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 67 - 70
  • [13] SIMPLE ANALYTICAL MODEL FOR THE ELECTRICAL CHARACTERISTICS OF DEPLETION-MODE MOSFET'S WITH APPLICATION TO LOW-TEMPERATURE OPERATION.
    Wilson, Kimberley A.
    Tuxbury, Patricia L.
    Anderson, Richard L.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1731 - 1737
  • [14] Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
    Wu, JY
    Wang, HH
    Sze, PW
    Wang, YH
    Houng, MP
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 149 - 154
  • [15] Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates
    Kwak, Taemyung
    Nam, Yoonseok
    Kwon, Yeonghwa
    Yoo, Geunho
    Kim, Seong-woo
    Nam, Okhyun
    DIAMOND AND RELATED MATERIALS, 2025, 153
  • [16] ANALYTICAL MODELING OF ULTRA-THIN FILM DEPLETION-MODE SOI MOSFETS
    BALESTRA, F
    BRINI, J
    GHIBAUDO, G
    SOLID-STATE ELECTRONICS, 1991, 34 (12) : 1361 - 1364
  • [17] Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
    Hasan, Abu Shahir Md Khalid
    Hossain, Md Maksudul
    Heris, Pedram Chavoshipour
    Mantooth, H. Alan
    2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 2461 - 2467
  • [18] HOT-HOLE-INDUCED DEGRADATION IN DEPLETION-MODE N-CHANNEL MOSFETS
    STOEV, I
    BAUER, F
    BALK, P
    ELECTRONICS LETTERS, 1985, 21 (01) : 30 - 31
  • [19] MODELING OF A DEPLETION-MODE MOSFET
    PARIKH, CD
    VASI, J
    SOLID-STATE ELECTRONICS, 1987, 30 (07) : 699 - 703
  • [20] Ternary Competitive to Binary: A Novel Implementation of Ternary Logic Using Depletion-mode and Conventional MOSFETs
    Lee, Hyundong
    Jang, Hyeseung
    Yun, Jihyeong
    Jin, Huijeen
    Kim, Jongbeom
    Kim, Yeji
    Song, Taigon
    2022 IEEE 52ND INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC (ISMVL 2022), 2022, : 21 - 26
12345