ION-BEAM CRYSTALLOGRAPHY OF INGAAS EPITAXIAL LAYERS ON INP SUBSTRATES

被引：13

作者：

COLE, JM ^{[1
]}

EARWAKER, LG ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

BASS, SJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2639 / 2641

页数：3

共 13 条

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[7] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

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[8] AXIAL CHANNELING STUDIES OF STRAINED-LAYER SUPERLATTICES .2. RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS [J].

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[9] STRAIN-MEASUREMENTS BY CHANNELING ANGULAR SCANS [J].

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[10] ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (10) :930-932

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