ELECTRICAL STUDIES OF RAPIDLY ANNEALED NI AND PD/N-GAAS SCHOTTKY DIODES

被引：1
|
作者：
EFTEKHARI, G
机构：
[1] State University of New York, New Paltz, Department of Electrical Engineering, New Paltz, New York, 12561
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期
关键词：
GAAS; RAPID THERMAL ANNEALING; NEAR NOBLE METALS; SCHOTTKY BARRIER; THERMAL STABILITY;
D O I：
10.1143/JJAP.34.2247
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of rapid thermal annealing 1-100 s on the electrical characteristics of Ni and Pd contacts on n-GaAs are studied. At annealing temperature (T-a) of 300 degrees C and 450 degrees C the contacts remained quite stable. At annealing temperature of 600 degrees C the contacts showed sign of degradation if they are annealed for more than 40 s. Degradation in Pd contacts was more pronounced than in Ni contacts. Consumption of GaAs and formation of different reactions at the interface, resulting in a layer containing defects and inhomogeneity are used to explain the observations.
引用
收藏
页码：2247 / 2251
页数：5
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