CORE EXCITONS AT THE BORON K EDGE IN HEXAGONAL BN

被引:50
作者
DAVIES, BM
BASSANI, F
BROWN, FC
OLSON, CG
机构
[1] UNIV ILLINOIS,URBANA,IL 61801
[2] IOWA STATE UNIV SCI & TECHNOL,US DOE,AMES LAB,AMES,IA 50011
来源
PHYSICAL REVIEW B | 1981年 / 24卷 / 06期
关键词
D O I
10.1103/PhysRevB.24.3537
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3537 / 3546
页数:10
相关论文
共 25 条
[1]   CORE EXCITONS AND SOFT-X-RAY THRESHOLD OF SILICON [J].
ALTARELL.M ;
DEXTER, DL .
PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1100-&
[2]   WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE [J].
ALTARELLI, M ;
HSU, WY .
PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1346-1349
[3]   PHOTOEMISSION INVESTIGATION OF HEXAGONAL BN - BAND-STRUCTURE AND ATOMIC EFFECTS [J].
BARTH, J ;
KUNZ, C ;
ZIMKINA, TM .
SOLID STATE COMMUNICATIONS, 1980, 36 (05) :453-456
[4]   SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE [J].
BROWN, FC ;
BACHRACH, RZ ;
LIEN, N .
NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01) :73-79
[5]   EFFECT OF X-RAY POLARIZATION AT BORON K EDGE IN HEXAGONAL BN [J].
BROWN, FC ;
BACHRACH, RZ ;
SKIBOWSKI, M .
PHYSICAL REVIEW B, 1976, 13 (06) :2633-2635
[6]   GROUND STATE ENERGY OF FREE EXCITONS IN GROUP-IV AND GROUP-III-V SEMICONDUCTORS [J].
CZAJA, W .
PHYSIK DER KONDENSITERTEN MATERIE, 1971, 12 (03) :226-+
[7]   ENERGY BANDS AND OPTICAL PROPERTIES OF HEXAGONAL BORON NITRIDE AND GRAPHITE [J].
DONI, E ;
PARRAVIC.GP .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1969, 64 (01) :117-&
[8]  
FOMICHEV VA, 1968, J PHYS CHEM SOLIDS, V29, P2025
[9]  
FOMICHEV VA, 1968, SOV PHYS-SOLID STATE, V9, P2496
[10]  
FRENCH A, 1978, INTRO QUANTUM PHYSIC