EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON

被引:34
作者
ADAMS, AC
CAPIO, CD
机构
关键词
D O I
10.1149/1.2127423
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:366 / 370
页数:5
相关论文
共 18 条
[1]   NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J].
ABE, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) :1825-1826
[2]   WALL PROFILES PRODUCED DURING PHOTORESIST MASKED ISOTROPIC ETCHING [J].
BRANDES, RG ;
DUDLEY, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :140-142
[3]   ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].
COBURN, JW ;
WINTERS, HF ;
CHUANG, TJ .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540
[4]   PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403
[5]   SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J].
COBURN, JW ;
KAY, E .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) :33-41
[6]  
HARSHBARGER WR, COMMUNICATION
[7]   PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J].
HEINECKE, RAH .
SOLID-STATE ELECTRONICS, 1976, 19 (12) :1039-1040
[8]   MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].
MAUER, JL ;
LOGAN, JS ;
ZIELINSKI, LB ;
SCHWARTZ, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1734-1738
[9]   PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J].
MOGAB, CJ ;
ADAMS, AC ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3796-3803
[10]   ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J].
MOGAB, CJ ;
LEVINSTEIN, HJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :721-730