VELOCITY-FIELD CHARACTERISTICS OF MINORITY-CARRIERS (ELECTRONS) IN P-IN0.53GA0.47AS

被引：40

作者：

DEGANI, J

LEHENY, RF

NAHORY, RE

HERITAGE, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：569 / 572

页数：4

共 8 条

[1] FAST PHOTOCONDUCTIVE DETECTOR USING PARA-INO.53GAO.47AS WITH RESPONSE TO 1.7-MU-M [J].

DEGANI, J ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

HERITAGE, JP ;

DEWINTER, JC .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :27-29

[2] INTEGRATED PHOTOCONDUCTIVE DETECTOR AND WAVE-GUIDE STRUCTURE [J].

GAMMEL, JC ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :149-151

[3] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[4] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH ;

FERRY, DK ;

HARRISON, JW .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114

[5]

Marsh J. H., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P621

[6] ABSOLUTE MEASUREMENT OF ELECTRON VELOCITY-FIELD CHARACTERISTIC OF INSB [J].

NEUKERMANS, A ;

KINO, GS .

PHYSICAL REVIEW B, 1973, 7 (06) :2703-2709

[7] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[8] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].

OLIVER, JD ;

EASTMAN, LF .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712

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