ELECTRONIC-STRUCTURE OF A-SN AND ITS DEPENDENCE ON HYDROSTATIC STRAIN

被引：63

作者：

BRUDEVOLL, T ^{[1
]}

CITRIN, DS ^{[1
]}

CARDONA, M ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS,DENMARK

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.8629

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of alpha-Sn is calculated within the local-density approximation. As a result of the inadequacies of this approximation for the description of excitation energies, the band structure is corrected to agree with energy differences at points of high symmetry by introducing additional external potentials on the atomic sites as well as on the interstitial positions of the diamond lattice. The resulting band structures are used to obtain effective masses as well as hydrostatic deformation potentials.

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页码：8629 / 8635

页数：7

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