PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION

被引：20

作者：

NISHIZAWA, JI

TERASAKI, T

YAGI, K

MIYAMOTO, N

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

[2] SEMICONDUCTOR RES INST,SENDAI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 05期

关键词：

D O I：

10.1149/1.2134288

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：664 / 669

页数：6

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[4]

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[5] PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J].

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BERKENBL.M ;

REISMAN, A .

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[6]

MIYAMOTO N, 1974, J JPN SOC APPL PHY S, V43, P408

[7]

MIYAMOTO N, 1973, 5TH P INT C SOL STAT

[8]

MROZKOWSKI RS, 1968, J ELECTROCHEM SOC, V115, P750

[9]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10]

Renninger M, 1967, ADV XRAY ANAL, V10, P32

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