SPUTTERED YBA2CU3OY THIN-FILMS ON SAPPHIRE AND SILICON SUBSTRATES USING YTTRIA STABILIZED ZRO2 BUFFER LAYERS

被引：6

作者：

SCHMIDT, H ^{[1
]}

HRADIL, K ^{[1
]}

GIERES, G ^{[1
]}

HOSLER, W ^{[1
]}

EIBL, O ^{[1
]}

机构：

[1] SIEMENS AG,RES & DEV,W-8520 ERLANGEN,GERMANY

来源：

PHYSICA C | 1991年 / 180卷 / 1-4期

关键词：

D O I：

10.1016/0921-4534(91)90629-D

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YBa2Cu3Ox thin films were deposited by sputtering on (1102BAR) sapphire and (100) silicon using an intermediate buffer layer of Y-stabilized ZrO2 (YSZ). On sapphire the YSZ layer and the YBa2Cu3Ox grew epitaxially as was confirmed by ion channeling and RBS. The c-oriented YBa2Cu3Ox films had a T(c) of up to 90 K and j(c) was 0.5-1.4 * 10(6) A/cm2 at 77 K in zero magnetic field. On silicon the YSZ and the YBa2Cu3Ox layer were highly textured, but polycrystalline. These YBa2Cu3Ox films had T(c) values of up to 79 K.

引用

页码：34 / 37

页数：4

共 10 条

[1]

BEHNER H, 1990, MAY P ICMC 90 TOP C

[2] Y1BA2CU3O7-X THIN-FILMS GROWN ON SAPPHIRE WITH EPITAXIAL MGO BUFFER LAYERS [J].

BEREZIN, AB ;

YUAN, CW ;

DELOZANNE, AL .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :90-92

[3] MICROWAVE SURFACE-RESISTANCE OF EPITAXIAL YBA2CU3O7 THIN-FILMS ON SAPPHIRE [J].

CHAR, K ;

NEWMAN, N ;

GARRISON, SM ;

BARTON, RW ;

TABER, RC ;

LADERMAN, SS ;

JACOWITZ, RD .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :409-411

[4]

EIBL O, IN PRESS

[5] REACTION PATTERNING OF YBA2CU3O7-DELTA THIN-FILMS ON SI [J].

FORK, DK ;

BARRERA, A ;

GEBALLE, TH ;

VIANO, AM ;

FENNER, DB .

APPLIED PHYSICS LETTERS, 1990, 57 (23) :2504-2506

[6]

FUKUMOTO H, 1990, P ELECTROCHEMICAL SO, V907, P239

[7]

MYOREN H, 1990, JPN J APPL PHYS, V29, P955

[8]

SCHMIDT H, 1990, MAY P ICMC 90 TOP C

[9]

SCHMIDT H, 1989, J LESS-COMMON MET, V151, P411

[10]

SCHMIDT HJ, IN PRESS

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