INFLUENCE OF THE INDIUM IMPURITY ON THE ELECTROPHYSICAL PROPERTIES OF PB1-XSNX TE WITH X GREATER-THAN 0.3

Photoelectric measurements (at helium temperatures and galvanomagnetic measurements at 4.2-300 K) were made on a batch of (Pb1-xSnx)0.99In0.01Te (0.3 < x < 1) single crystals. The samples with x = 0.31, 0.35, and 0.40 exhibited slow relaxation of nonequilibrium carriers at T < 20 K. In the case of the sample with x = 0.6 there was no such slow relaxation, but the kinetic characteristics indicated a weak influence of indium on the scattering process. In a sample of Sn0.99In0.01Te the scattering by indium atoms became the dominant effect at low temperatures. The dependence of the level of stabilization of the chemical potential on the composition was determined.