EFFECT OF SHEAR ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM

被引：39

作者：

FRITZSCHE, H

机构：

来源：

PHYSICAL REVIEW | 1960年 / 119卷 / 06期

关键词：

D O I：

10.1103/PhysRev.119.1899

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1899 / 1900

页数：2

共 13 条

[1] ELECTRON SPIN RESONANCE EXPERIMENTS ON SHALLOW DONORS IN GERMANIUM [J].

FEHER, G ;

WILSON, DK ;

GERE, EA .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :25-28

[2] OBSERVATION OF NUCLEAR MAGNETIC RESONANCES VIA THE ELECTRON SPIN RESONANCE LINE [J].

FEHER, G .

PHYSICAL REVIEW, 1956, 103 (03) :834-835

[3] SPIN RESONANCE OF DONORS IN SILICON [J].

FLETCHER, RC ;

YAGER, WA ;

PEARSON, GL ;

HOLDEN, AN ;

READ, WT ;

MERRITT, FR .

PHYSICAL REVIEW, 1954, 94 (05) :1392-1393

[4] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J].

FRITZSCHE, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) :69-80

[5] PIEZORESISTANCE OF N-TYPE GERMANIUM [J].

FRITZSCHE, H .

PHYSICAL REVIEW, 1959, 115 (02) :336-345

[6]

FRITZSCHE H, UNPUB

[7] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].

HERRING, C ;

VOGT, E .

PHYSICAL REVIEW, 1956, 101 (03) :944-961

[8] ELECTRON SPIN RESONANCE OF AN IMPURITY LEVEL IN SILICON [J].

HONIG, A ;

KIP, AF .

PHYSICAL REVIEW, 1954, 95 (06) :1686-1687

[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[10]

MILLER A, 1960, THESIS RUTGERS U

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